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个人信息Personal Information
副教授
硕士生导师
教师拼音名称：Zhang Guocheng
所在单位：电子电气与物理学院
职务：微电子科学与工程教研室主任
学历：博士研究生毕业
办公地点：C1-601
联系方式：邮箱：zgc@fjut.edu.cn
学位：博士学位
在职信息：在职
主要任职：微电子科学与工程专业教师
毕业院校：福州大学
学科：电子科学与技术
微电子科学与工程
- .Chen, Qizhen, Yujie Yan, Xiaomin Wu, Xiumei Wang, Guocheng Zhang, Jinwei Chen, Huipeng Chen, and Tailiang Guo. "Gate-tunable all-inorganic QLED with enhanced charge injection balance." Journal of Materials Chemistry C 8, no. 4 (2020): 1280-1285.(SCI一区),2019
- .Yang, Huihuang, Yaqian Liu, Xiaomin Wu, Yujie Yan, Xiumei Wang, Shuqiong Lan, Guocheng Zhang, Huipeng Chen, and Tailiang Guo. "High‐Performance All‐Inorganic Perovskite‐Quantum‐Dot‐Based Flexible Organic Phototransistor Memory with Architecture Design." Advanced Electronic Materials 5, no. 12 (2019): 1900864.(SCI二区),2019
- .Lan, Shuqiong, Xiaomin Wu, Guocheng Zhang, Gengxu Chen, Huipeng Chen, and Tailiang Guo. "Improvement of device performance of organic photovoltaics via laser irradiation." The Journal of Physical Chemistry C 123, no. 36 (2019): 22058-22065.(SCI二区),2019
- .Wu, Xiaomin, Shuqiong Lan, Guocheng Zhang, Huipeng Chen, and Tailiang Guo. "The effect of light environment during the film formation process on the morphology and function of organic photovoltaics." Journal of Materials Chemistry C 7, no. 34 (2019): 10581-10588.(SCI一区),2019
- .杨文宇，张国成*，崔宇,等. 喷墨打印金属氧化物异质结晶体管[J]. 发光学报,2019,40(4):497-503. (EI),2019
- .Lan, Shuqiong, Yujie Yan, Huihuang Yang, Guocheng Zhang, Yun Ye, Fushan Li, Huipeng Chen, and Tailiang Guo. "Improving device performance of n-type organic field-effect transistors via doping with a p-type organic semiconductor." Journal of Materials Chemistry C 7, no. 15 (2019): 4543-4550.(SCI一区),2019
- .Guocheng Zhang, Jianfeng Zhong, Qizhen Chen, Yujie Yan, Huipeng Chen* and Tailiang Guo, High-performance organic phototransistors with vertical structure design. IEEE Transactions on Electron Devices. 2019, 66(4): 1815-1818. (SCI二区),2019
- .Guocheng Zhang, Pingjun Zhang, Huipeng Chen and Tailiang Guo, Modification of polymer gate dielectrics for organic thin-film transistor from inkjet printing. Applied Physics A-Materials Science & Processing. 2018, 124(7): 481. (SCI三区),2018
- .Guocheng Zhang, Pingjun Zhang, Daobing Hu, Huipeng Chen and Tailiang Guo, A postalignment method for high-mobility organic thin-film transistors. IEEE Transactions on Electron Devices. 2018, 65(3): 1101-1106.(SCI二区),2018
- .Han, Guoqiang, Xiumei Wang, Jun Zhang, Guocheng Zhang, Huihuang Yang, Daobin Hu, Dawei Sun et al. "Interface engineering with double-network dielectric structure for flexible organic thin film transistors." Organic Electronics 52 (2018): 213-221.(SCI二区),2018
- .Wu, Xiaomin, Shuqiong Lan, Guocheng Zhang, Qizhen Chen, Huipeng Chen, and Tailiang Guo. "Morphology of a ternary blend solar cell based on small molecule: conjugated polymer: fullerene fabricated by blade coating." Advanced Functional Materials 27, no. 40 (2017): 1703268.(SCI一区),2017
- .Chen, Cihai, Gengxu Chen, Huihuang Yang, Guocheng Zhang, Daobin Hu, Huipeng Chen, and Tailiang Guo. "Solution-processed metal oxide arrays using femtosecond laser ablation and annealing for thin-film transistors." Journal of Materials Chemistry C 5, no. 36 (2017): 9273-9280.(SCI一区),2017
- .Hu, Daobing, Guocheng Zhang, Huihuang Yang, Jun Zhang, Cihai Chen, Shuqiong Lan, Huipeng Chen, and Tailiang Guo. "High-performance nonvolatile organic transistor memory using quantum dots-based floating gate." IEEE Transactions on Electron Devices 64, no. 9 (2017): 3816-3821.(SCI二区),2017
- .Lan, Shuqiong, Huihuang Yang, Guocheng Zhang, Xiaomin Wu, Qizhen Chen, Liang Chen, Huipeng Chen, and Tailiang Guo. "Importance of solvent removal rate on the morphology and device performance of organic photovoltaics with solvent annealing." ACS applied materials & interfaces 9, no. 24 (2017): 20679-20685.(SCI一区),2017
- .Han, Guoqiang, Jun Zhang, Guocheng Zhang, Huihuang Yang, Shuqiong Lan, Xiumei Wang, Huipeng Chen, and Tailiang Guo. "Surface infused interpenetrating network as gate dielectric for high performance thin film transistors." Macromolecular Materials and Engineering 302, no. 5 (2017): 1600562.(SCI二区),2017