![]()
-
.Zhang, Guocheng, Xin Yi, Zhida Li, Jianchuan Tang, Zili Zeng, Changqiang Su, Li Zhuo, Xuanye Huang, Enlong Li*, Changsong Gao*, and Huipeng Chen*. "Single-Layer Ferroelectric-Photosensitive Optoelectronic Transistor enabling in-sensor UV Fingerprint Recognition." IEEE Electron Device Letters(Accepted), 2026
-
.Zhang Guocheng, Zeng Zili, Yan Yujie, Tang Jianchuan, Wang Hongyu, Su Changqiang, Yi Xin, Zhang Xianghong, Hu Yuanyuan, Chen Huipeng*. “Ultraviolet-Regulated Synaptic-Neuronal Function Reconfigurable Transparent Memristor for Neuromorphic Computing Hardware.” Advanced Functional Materials, vol. 36, no. 34, pp: e31113(1-15),2026. (SCI一区)
-
.张国成*, 曾自力, 唐建川, 苏长强, 易鑫, 黄宣烨, 卓立, 严育杰*. 基于超薄氧化铝绝缘修饰层忆阻器的光电神经元[J]. 发光学报, 2026, 47(3): 515-525.(EI)，2026
-
.Zhang, Guocheng*, Hongyu Wang, Shixian Qin, Jianchuan Tang, Zili Zeng, Changqiang Su, Xin Yi, Xianghong Zhang*, and Huipeng Chen*. "Tunable synaptic transistor with volatile and non-volatile switching capabilities for hierarchical data processing." IEEE Electron Device Letters, vol. 46, no. 5, pp. 789-792, (2025).(SCI二区),2025
-
.Zhang, Guocheng, Jianchuan Tang, Binglin Lai, Hongyu Wang, Zili Zeng, Changqiang Su, Xin Yi, Yujie Yan, and Huipeng Chen*. "Retina-Inspired Artificial Optoelectronic Neurons With Broad Spectral Response for Visual Image Pre-Processing," IEEE Electron Device Letters, vol. 46, no. 3, pp. 401-404, (2025).(SCI二区),2025
Patents
-
,张国成，邢俊杰等. 一种透明顶栅薄膜突触晶体管及其制作方法. 中国发明专利, 实审.
-
,张国成，秦世贤等. 基于超薄浮栅晶体管的仿生突触. 中国发明专利, 实审.
-
,张国成，马超等. 一种基于薄膜晶体管的柔性透明浮栅存储器及其制备方法. 中国发明专利, 实审.
-
,陈惠鹏，张国成，杨辉煌，胡利勤，蓝淑琼，郭太良. 一种基于激光刻蚀技术的薄膜晶体管阵列及其制作方法. 中国发明专利, 专利号: ZL201610072062.2, 授权日期: 2018年10月26日.
-
,陈惠鹏，张国成，杨辉煌，胡利勤，蓝淑琼，郭太良. 一种有机薄膜晶体管及提高有机薄膜晶体管迁移率的方法. 中国发明专利, 专利号: ZL201610080077.3, 授权日期: 2018年06月15日.
