一种绝缘层上高浓度N型掺杂薄锗材料及其制作方法
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Affilication of Author(s):电子电气与物理学院
Patent Coverage:国内
First Author:黄诗浩
Disigner of the Invention:聂明星,蒋新华,Shao Ming,林抒毅,谢文明,林承华,陈佳新,蒋新华 陈佳新 林承华 聂明星 谢文明 林抒毅 邵明
Type of Patent:发明专利
State of Patent:专利授权
Application Number:201510115322.5
Authorization number:2624486
Number of Inventors:8
Service Invention or Not:no
Application Date:2015-03-17
Publication Date:2015-06-10
Authorization Date:2017-09-29
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