一种提高锗薄膜张应变的制备方法

Affilication of Author(s):电子电气与物理学院

Patent Coverage:国内

First Author:黄诗浩

Disigner of the Invention:聂明星,蒋新华,Shao Ming,林抒毅,谢文明,林承华,陈佳新,蒋新华 陈佳新 林承华 聂明星 谢文明 林抒毅 邵明

Type of Patent:发明专利

State of Patent:专利授权

Application Number:201510081779.9

Authorization number:2625094

Number of Inventors:8

Service Invention or Not:no

Application Date:2015-02-15

Publication Date:2015-06-03

Authorization Date:2017-09-29