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一种高频磁元件绕组损耗的测量方法

Release time:2022-02-19 Hits:

Affilication of Author(s):电子电气与物理学院
Patent Coverage:国内
First Author:叶建盈
Disigner of the Invention:黄文彬,黄晓生,Li Jinbin,郑荣进
Type of Patent:发明专利
State of Patent:专利授权
Application Number:201811432097.8
Authorization number:4283137
Number of Inventors:5
Service Invention or Not:no
Application Date:2018-11-28
Publication Date:2021-03-02
Authorization Date:2021-03-02