横向p-n-n微腔结构Ge发光器件
Hits:
Affilication of Author(s):电子电气与物理学院
Patent Coverage:国内
Disigner of the Invention:陈彩云,谢文明,黄诗浩,李天建,jing Huang,郑启强
Type of Patent:实用新型
State of Patent:专利授权
Application Number:201820091056.6
Authorization number:7957647
Number of Inventors:8
Service Invention or Not:no
Application Date:2018-01-19
Publication Date:2018-10-16
Authorization Date:2018-10-16
-
|
ZipCode:415e2bc10f99254418babb00b2cbd5d3a60220ce75cc228a64d8de3a0ae43a83723eec34655a2c3f7c78de3cc4c267550b31a73c75cd08bdaab7d741fa05f361d7c6648b0fc5a8315616daf06ce37c612323a0a1cd917bf7c916a12e231a0d93b883508f53ef45da84a021de851fc0a658af56e5da2c57ac2f946bd9c897dbb8
PostalAddress:380a220881e9c666e774e73971b4b566f256b39d6c0fbb9e5eb6b2867f27ff2522497c81d83589d617b98fcdd1a688b2f402689edeaa46f520ffa98a01f4d9dda36c5615c27d31fc5535a5a6572d119f0388cb2a3f2f227b1d35da6f672832e689957409b12ec5f965e2bd8a52e732453d9725c3cc5120c012ef8cae9f289ffc
|