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Hongxiang Chen

Personal Information

Associate professor  
Supervisor of Master's Candidates  

Paper Publications

Y. Guo, L. Guo, J. Yang, W. Hu, H. Chen, Controllable growth of P-type graphene on the boron ion-implanted Si-face of SiC (0001), Appl. Phys. Lett. 115 (2019). https://doi.org/10.1063/1.5124418.

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Pre One:X. Fan, H. Chen, L. Zhao, S. Jin, G. Wang, Quick suppression of superconductivity of NbSe2 by Rb intercalation, Solid State Commun. 297 (2019) 6–10. https://doi.org/10.1016/j.ssc.2019.04.016.

Next One:X. Fan, J. Deng, H. Chen, L. Zhao, R. Sun, S. Jin, X. Chen, Nematicity and superconductivity in orthorhombic superconductor N a0.35(C3 N2 H10)0.426 Fe 2 Se 2, Phys. Rev. Mater. 2 (2018) 1–9. https://doi.org/10.1103/PhysRevMaterials.2.114802.