一种绝缘层上高浓度N型掺杂薄锗材料结构

Affilication of Author(s):电子电气与物理学院

Patent Coverage:国内

First Author:黄诗浩

Disigner of the Invention:聂明星,蒋新华,林抒毅,谢文明,Shao Ming,林承华,陈佳新,陈佳新 林承华 蒋新华 聂明星 邵明 谢文明 林抒毅

Type of Patent:实用新型

State of Patent:专利授权

Application Number:201520149937.5

Authorization number:4447073

Number of Inventors:8

Service Invention or Not:yes

Application Date:2015-03-17

Publication Date:2015-07-15

Authorization Date:2015-07-15