一种提高锗薄膜张应变的制备方法

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Affilication of Author(s):电子电气与物理学院

Patent Coverage:国内

Disigner of the Invention:Shao Ming,林抒毅,谢文明,黄诗浩,林承华,蒋新华 林承华 聂明星 黄诗浩 谢文明 林抒毅 邵明

Type of Patent:发明专利

State of Patent:专利授权

Application Number:201510081779.9

Authorization number:2625094

Number of Inventors:8

Service Invention or Not:no

Application Date:2015-02-15

Publication Date:2015-06-03

Authorization Date:2017-09-29