一种绝缘层上高浓度N型掺杂薄锗材料结构
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Affilication of Author(s):电子电气与物理学院
Patent Coverage:国内
Disigner of the Invention:林抒毅,谢文明,黄诗浩,Shao Ming,林承华,林承华 蒋新华 聂明星 邵明 黄诗浩 谢文明 林抒毅
Type of Patent:实用新型
State of Patent:专利授权
Application Number:201520149937.5
Authorization number:4447073
Number of Inventors:8
Service Invention or Not:yes
Application Date:2015-03-17
Publication Date:2015-07-15
Authorization Date:2015-07-15
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